IPI70R950CEXKSA1

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Mfr.Part #
IPI70R950CEXKSA1
Manufacturer
Infineon Technologies
Package / Case
Datasheet
Download
Description
CONSUMER
Stock
495
In Stock :
495

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Terminal Position :
Single
Published :
2013
Halogen Free :
Halogen Free
Number of Elements :
1
Drain-source On Resistance-Max :
0.95Ohm
Factory Lead Time :
18 Weeks
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
THROUGH-HOLE
Pulsed Drain Current-Max (IDM) :
12A
Polarity/Channel Type :
N-Channel
Avalanche Energy Rating (Eas) :
50 mJ
Case Connection :
DRAIN
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Min Operating Temperature :
-40°C
JEDEC-95 Code :
TO-262AA
Lead Free :
Lead Free
Configuration :
SINGLE WITH BUILT-IN DIODE
Max Dual Supply Voltage :
700V
Max Operating Temperature :
150°C
Drain to Source Voltage (Vdss) :
700V
RoHS Status :
ROHS3 Compliant
Operating Mode :
ENHANCEMENT MODE
Number of Terminations :
3
Surface Mount :
No
JESD-30 Code :
R-PSIP-T3
Transistor Application :
SWITCHING
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Datasheets
IPI70R950CEXKSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPI70R950CEXKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, IPI70R950CEXKSA1 pinout, IPI70R950CEXKSA1 datasheet PDF, IPI70R950CEXKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPI70R950CEXKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



700V

IPI70R950CEXKSA1 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 50 mJ.Pulsed drain current is maximum rated peak drain current 12A.With 700V power, it supports a dual voltage supply of up to maximum.This transistor requires a drain-source voltage (Vdss) of 700V.

IPI70R950CEXKSA1 Features


the avalanche energy rating (Eas) is 50 mJ
based on its rated peak drain current 12A.
a 700V drain to source voltage (Vdss)


IPI70R950CEXKSA1 Applications


There are a lot of Infineon Technologies
IPI70R950CEXKSA1 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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