IPG20N06S4L14ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

13.7m Ω @ 17A, 10V

Number of Pins :

8

Power - Max :

50W

Max Power Dissipation :

50W

Transistor Element Material :

SILICON

Mount :

Surface Mount

Fall Time (Typ) :

15 ns

Continuous Drain Current (ID) :

20A

Number of Terminations :

8

Avalanche Energy Rating (Eas) :

90 mJ

Operating Temperature :

-55°C~175°C TJ

Series :

Automotive, AEC-Q101, OptiMOS™

Published :

2010

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

LOGIC LEVEL COMPATIBLE

Input Capacitance (Ciss) (Max) @ Vds :

2890pF @ 25V

Terminal Form :

Flat

Drain-source On Resistance-Max :

0.0137Ohm

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

2 N-Channel (Dual)

ECCN Code :

EAR99

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Package / Case :

8-PowerVDFN

Turn On Delay Time :

8 ns

Vgs(th) (Max) @ Id :

2.2V @ 20μA

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

16V

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Max Dual Supply Voltage :

60V

Rise Time :

2ns

FET Feature :

Logic Level Gate

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

40 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED