IPG20N06S415ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

50W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

17 ns

Published :

2005

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Package / Case :

8-PowerVDFN

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Series :

Automotive, AEC-Q101, OptiMOS™

Height :

1mm

Input Capacitance (Ciss) (Max) @ Vds :

2260pF @ 25V

Terminal Form :

Flat

Avalanche Energy Rating (Eas) :

90 mJ

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

60V

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 17A, 10V

Fall Time (Typ) :

9 ns

Max Power Dissipation :

50W

Factory Lead Time :

12 Weeks

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0155Ohm

Length :

5.15mm

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Number of Elements :

2

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 20µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

20A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

8

Element Configuration :

Dual

Mount :

Surface Mount

FET Feature :

Standard

Pbfree Code :

yes

Number of Pins :

8

Rise Time :

2ns

Turn On Delay Time :

12 ns

Drain to Source Breakdown Voltage :

60V

Width :

6.15mm

FET Type :

2 N-Channel (Dual)