IPG20N06S415ATMA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

1mm

FET Feature :

Standard

Length :

5.15mm

Mounting Type :

Surface Mount

Rise Time :

2ns

Mount :

Surface Mount

Width :

6.15mm

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

50W

Power Dissipation :

50W

Terminal Form :

Flat

Drain to Source Breakdown Voltage :

60V

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 17A, 10V

Number of Pins :

8

Published :

2005

Input Capacitance (Ciss) (Max) @ Vds :

2260pF @ 25V

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Dual Supply Voltage :

60V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

9 ns

Package / Case :

8-PowerVDFN

Halogen Free :

Halogen Free

Turn On Delay Time :

12 ns

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

2

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

FET Type :

2 N-Channel (Dual)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 20µA

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Series :

Automotive, AEC-Q101, OptiMOS™

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

20A

Factory Lead Time :

12 Weeks

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

90 mJ

Drain-source On Resistance-Max :

0.0155Ohm

Number of Terminations :

8

Turn-Off Delay Time :

17 ns

Transistor Element Material :

SILICON