IPG20N06S415ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

8

Continuous Drain Current (ID) :

20A

Max Dual Supply Voltage :

60V

Terminal Form :

Flat

Package / Case :

8-PowerVDFN

Power - Max :

50W

FET Feature :

Standard

Vgs(th) (Max) @ Id :

4V @ 20µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

Automotive, AEC-Q101, OptiMOS™

Avalanche Energy Rating (Eas) :

90 mJ

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

17 ns

Fall Time (Typ) :

9 ns

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Number of Terminations :

8

Max Power Dissipation :

50W

Published :

2010

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2260pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

2ns

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0155Ohm

Turn On Delay Time :

12 ns

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

15.5m Ω @ 17A, 10V

Mount :

Surface Mount