IPG20N06S3L-23

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

42nC @ 10V

Fall Time (Typ) :

75 ns

Number of Pins :

8

JESD-609 Code :

e3

RoHS Status :

RoHS Compliant

Qualification Status :

Not Qualified

Gate to Source Voltage (Vgs) :

16V

Turn-Off Delay Time :

40 ns

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

2

Terminal Finish :

MATTE TIN

Power Dissipation :

45W

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Rise Time :

35ns

Rds On (Max) @ Id, Vgs :

23m Ω @ 16A, 10V

Element Configuration :

Dual

Published :

2008

Drain to Source Voltage (Vdss) :

55V

Additional Feature :

LOGIC LEVEL COMPATIBLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Terminations :

6

Package / Case :

8-PowerVDFN

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Drain Current-Max (Abs) (ID) :

33A

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

20A

Vgs(th) (Max) @ Id :

2.2V @ 20μA

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.023Ohm

Avalanche Energy Rating (Eas) :

110 mJ

JESD-30 Code :

R-PDSO-F6

Pin Count :

8

Series :

OptiMOS™

Base Part Number :

*PG20N06

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

40

FET Type :

2 N-Channel (Dual)

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Terminal Form :

Flat

Drain to Source Breakdown Voltage :

55V

Max Power Dissipation :

45W