IPG20N06S2L50ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

3ns

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Halogen Free :

Halogen Free

Base Part Number :

*PG20N06

FET Type :

2 N-Channel (Dual)

Input Capacitance (Ciss) (Max) @ Vds :

560pF @ 25V

Fall Time (Typ) :

10 ns

Published :

2003

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

20A

Terminal Form :

Flat

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Dual Supply Voltage :

55V

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

2

FET Feature :

Logic Level Gate

Drain-source On Resistance-Max :

0.05Ohm

Turn On Delay Time :

2 ns

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 19μA

JESD-30 Code :

R-PDSO-F

Avalanche Energy Rating (Eas) :

60 mJ

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Reference Standard :

AEC-Q101

Factory Lead Time :

10 Weeks

Package / Case :

8-PowerVDFN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

51W

Number of Pins :

8

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

50m Ω @ 15A, 10V

Lead Free :

Contains Lead

Max Power Dissipation :

51W