IPDH6N03LAG
- Mfr.Part #
- IPDH6N03LAG
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 50A TO252-3
- Stock
- 17,377
- In Stock :
- 17,377
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 50A
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 71W
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 71W Tc
- Operating Mode :
- ENHANCEMENT MODE
- Vgs(th) (Max) @ Id :
- 2V @ 30μA
- Series :
- OptiMOS™
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-252AA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 23 ns
- Drain to Source Breakdown Voltage :
- 25V
- Rise Time :
- 5.4ns
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 6m Ω @ 50A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2390pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs :
- 19nC @ 5V
- RoHS Status :
- RoHS Compliant
- Current Rating :
- 50A
- Terminal Finish :
- MATTE TIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Avalanche Energy Rating (Eas) :
- 150 mJ
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 50A Tc
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.006Ohm
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- Fall Time (Typ) :
- 4.2 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Published :
- 2005
- Number of Elements :
- 1
- Element Configuration :
- Single
- Number of Terminations :
- 2
- Voltage - Rated DC :
- 25V
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Datasheets
- IPDH6N03LAG

N-Channel Tape & Reel (TR) 6m Ω @ 50A, 10V ±20V 2390pF @ 15V 19nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
IPDH6N03LAG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 150 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2390pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 25V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 25V.As a result of its turn-off delay time, which is 23 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
IPDH6N03LAG Features
the avalanche energy rating (Eas) is 150 mJ
a continuous drain current (ID) of 50A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 23 ns
IPDH6N03LAG Applications
There are a lot of Infineon Technologies
IPDH6N03LAG applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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