IPDH4N03LAG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

25V

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current Rating :

90A

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

3200pF @ 15V

JESD-609 Code :

e3

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Pin Count :

4

Fall Time (Typ) :

4.6 ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Pulsed Drain Current-Max (IDM) :

360A

Power Dissipation-Max :

94W Tc

Vgs(th) (Max) @ Id :

2V @ 40µA

Qualification Status :

Not Qualified

Element Configuration :

Single

Avalanche Energy Rating (Eas) :

150 mJ

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

25V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Terminal Form :

Gull wing

Additional Feature :

LOGIC LEVEL COMPATIBLE

Terminal Finish :

MATTE TIN

JEDEC-95 Code :

TO-252AA

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

90A Tc

Turn-Off Delay Time :

29 ns

Series :

OptiMOS™

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drain-source On Resistance-Max :

0.0042Ohm

Lead Free :

Lead Free

Continuous Drain Current (ID) :

90A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2005

Mount :

Surface Mount

Case Connection :

DRAIN

Rise Time :

7ns

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 60A, 10V

Power Dissipation :

94W