IPDD60R080G7XTMA1
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- Mfr.Part #
- IPDD60R080G7XTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 10-PowerSOP Module
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 29A HDSOP-10
- Stock
- 26,098
- In Stock ：
- 26,098
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 9.7A, 10V
- Number of Channels :
- 1
- Continuous Drain Current (ID) :
- 29A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Factory Lead Time :
- 18 Weeks
- Height :
- 2.5mm
- Power Dissipation :
- 174W
- Operating Temperature :
- -55°C~150°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 600V
- Gate Charge (Qg) (Max) @ Vgs :
- 42nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1640pF @ 400V
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- 10-PowerSOP Module
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- CoolMOS™ G7
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power Dissipation-Max :
- 174W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 29A Tc
- Turn On Delay Time :
- 19 ns
- Turn-Off Delay Time :
- 61 ns
- Vgs(th) (Max) @ Id :
- 4V @ 490μA
- Vgs (Max) :
- ±20V
- Max Junction Temperature (Tj) :
- 150°C
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IPDD60R080G7XTMA1
N-Channel Tape & Reel (TR) 80m Ω @ 9.7A, 10V ±20V 1640pF @ 400V 42nC @ 10V 10-PowerSOP Module
IPDD60R080G7XTMA1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1640pF @ 400V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 61 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 19 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
IPDD60R080G7XTMA1 Features
a continuous drain current (ID) of 29A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 61 ns
IPDD60R080G7XTMA1 Applications
There are a lot of Infineon Technologies
IPDD60R080G7XTMA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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