IPDD60R050G7XTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

47A

Number of Terminations :

10

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Breakdown Voltage :

600V

Power Dissipation-Max :

278W Tc

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

47A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

50m Ω @ 15.9A, 10V

Turn On Delay Time :

22 ns

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.05Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2670pF @ 400V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

JEDEC-95 Code :

TO-252

Vgs (Max) :

±20V

Number of Channels :

1

Surface Mount :

yes

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Max Junction Temperature (Tj) :

150°C

Height :

2.5mm

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Turn-Off Delay Time :

72 ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

18 Weeks

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Power Dissipation :

278W

Package / Case :

10-PowerSOP Module

Operating Mode :

ENHANCEMENT MODE

Series :

CoolMOS™ G7

Vgs(th) (Max) @ Id :

4V @ 800μA