IPD49CN10N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

ECCN Code :

EAR99

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

49m Ω @ 20A, 10V

Published :

2011

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1090pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Terminal Form :

Gull wing

Case Connection :

DRAIN

Avalanche Energy Rating (Eas) :

29 mJ

Terminal Position :

Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

20A

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

80A

Drain-source On Resistance-Max :

0.049Ohm

JESD-609 Code :

e3

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

44W Tc

RoHS Status :

RoHS Compliant

Series :

OptiMOS™

Reach Compliance Code :

Compliant

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

4V @ 20µA

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

100V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Qualification Status :

Not Qualified

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

40

JEDEC-95 Code :

TO-252AA

Drain to Source Voltage (Vdss) :

100V

Transistor Element Material :

SILICON