IPD400N06NGBTMA1
- Mfr.Part #
- IPD400N06NGBTMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 27A TO252-3
- Stock
- 46,980
- In Stock :
- 46,980
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 27A
- Drain to Source Voltage (Vdss) :
- 60V
- Packaging :
- Tape and Reel (TR)
- DS Breakdown Voltage-Min :
- 60V
- Pulsed Drain Current-Max (IDM) :
- 108A
- Reach Compliance Code :
- not_compliant
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 4V @ 28μA
- Published :
- 2008
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-30 Code :
- R-PSSO-G2
- Input Capacitance (Ciss) (Max) @ Vds :
- 650pF @ 30V
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 27A Tc
- Series :
- OptiMOS™
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 68W Tc
- Qualification Status :
- Not Qualified
- Pbfree Code :
- No
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain-source On Resistance-Max :
- 0.04Ohm
- Surface Mount :
- yes
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 27A, 10V
- Pin Count :
- 4
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Number of Terminations :
- 2
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 80 mJ
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Additional Feature :
- AVALANCHE RATED
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IPD400N06NGBTMA1

N-Channel Tape & Reel (TR) 40m Ω @ 27A, 10V ±20V 650pF @ 30V 17nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
IPD400N06NGBTMA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 80 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 650pF @ 30V.A device's drain current is its maximum continuous current, and this device's drain current is 27A.A maximum pulsed drain current of 108A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPD400N06NGBTMA1 Features
the avalanche energy rating (Eas) is 80 mJ
based on its rated peak drain current 108A.
a 60V drain to source voltage (Vdss)
IPD400N06NGBTMA1 Applications
There are a lot of Infineon Technologies
IPD400N06NGBTMA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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