IPD400N06NGBTMA1

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Mfr.Part #
IPD400N06NGBTMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 60V 27A TO252-3
Stock
46,980
In Stock :
46,980

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drain Current-Max (Abs) (ID) :
27A
Drain to Source Voltage (Vdss) :
60V
Packaging :
Tape and Reel (TR)
DS Breakdown Voltage-Min :
60V
Pulsed Drain Current-Max (IDM) :
108A
Reach Compliance Code :
not_compliant
Terminal Form :
Gull wing
Vgs(th) (Max) @ Id :
4V @ 28μA
Published :
2008
JESD-609 Code :
e3
ECCN Code :
EAR99
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-30 Code :
R-PSSO-G2
Input Capacitance (Ciss) (Max) @ Vds :
650pF @ 30V
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Transistor Element Material :
SILICON
Operating Mode :
ENHANCEMENT MODE
Current - Continuous Drain (Id) @ 25°C :
27A Tc
Series :
OptiMOS™
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Power Dissipation-Max :
68W Tc
Qualification Status :
Not Qualified
Pbfree Code :
No
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Drain-source On Resistance-Max :
0.04Ohm
Surface Mount :
yes
Rds On (Max) @ Id, Vgs :
40m Ω @ 27A, 10V
Pin Count :
4
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Vgs (Max) :
±20V
Terminal Finish :
Tin (Sn)
FET Type :
N-Channel
Number of Terminations :
2
Operating Temperature :
-55°C~175°C TJ
Avalanche Energy Rating (Eas) :
80 mJ
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Additional Feature :
AVALANCHE RATED
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status :
ROHS3 Compliant
Datasheets
IPD400N06NGBTMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD400N06NGBTMA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, IPD400N06NGBTMA1 pinout, IPD400N06NGBTMA1 datasheet PDF, IPD400N06NGBTMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD400N06NGBTMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD400N06NGBTMA1


N-Channel Tape & Reel (TR) 40m Ω @ 27A, 10V ±20V 650pF @ 30V 17nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD400N06NGBTMA1 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 80 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 650pF @ 30V.A device's drain current is its maximum continuous current, and this device's drain current is 27A.A maximum pulsed drain current of 108A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 60V.In order to operate this transistor, a voltage of 60V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IPD400N06NGBTMA1 Features


the avalanche energy rating (Eas) is 80 mJ
based on its rated peak drain current 108A.
a 60V drain to source voltage (Vdss)


IPD400N06NGBTMA1 Applications


There are a lot of Infineon Technologies
IPD400N06NGBTMA1 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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