IPC60N04S4L06ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Max Dual Supply Voltage :

40V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

17 Weeks

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Dual

Series :

Automotive, AEC-Q101, OptiMOS™

Continuous Drain Current (ID) :

60A

Vgs(th) (Max) @ Id :

2.2V @ 30μA

JESD-30 Code :

R-PDSO-F3

Drain-source On Resistance-Max :

0.0079Ohm

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

120 mJ

Pulsed Drain Current-Max (IDM) :

240A

Package / Case :

8-PowerVDFN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±16V

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Lead Free :

Contains Lead

Halogen Free :

Halogen Free

Number of Pins :

8

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

60A Tc

Power Dissipation-Max :

63W Tc

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Mounting Type :

Surface Mount

Pbfree Code :

yes

Mount :

Surface Mount

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

3600pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

5.6m Ω @ 30A, 10V

Published :

2013

Terminal Form :

Flat