IPC60N04S406ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Number of Terminations :

3

Input Capacitance (Ciss) (Max) @ Vds :

2650pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 30μA

Avalanche Energy Rating (Eas) :

120 mJ

Power Dissipation-Max :

63W Tc

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Factory Lead Time :

26 Weeks

Published :

2013

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

FET Type :

N-Channel

Halogen Free :

Halogen Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Flat

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Package / Case :

8-PowerVDFN

Pbfree Code :

yes

Series :

Automotive, AEC-Q101, OptiMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Continuous Drain Current (ID) :

60A

JESD-609 Code :

e3

Case Connection :

DRAIN

Lead Free :

Contains Lead

Max Dual Supply Voltage :

40V

Pulsed Drain Current-Max (IDM) :

240A

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

60A Tc

JESD-30 Code :

R-PDSO-F3

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Drain-source On Resistance-Max :

0.006Ohm

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

6m Ω @ 30A, 10V

Number of Elements :

1