IPBH6N03LA G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

350A

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 5V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Surface Mount :

yes

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

150 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Power Dissipation-Max :

71W Tc

Pin Count :

4

Series :

OptiMOS™

Drain to Source Voltage (Vdss) :

25V

Additional Feature :

LOGIC LEVEL COMPATIBLE

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

2V @ 30μA

Published :

2006

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 50A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 15V

Number of Terminations :

2

Terminal Form :

Gull wing

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0062Ohm

FET Type :

N-Channel

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Reach Compliance Code :

Compliant

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

50A

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

50A Tc

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

25V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V