IPBH6N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

150 mJ

ECCN Code :

EAR99

Series :

OptiMOS™

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Published :

2006

Lead Free :

Contains Lead

Vgs(th) (Max) @ Id :

2V @ 30μA

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 5V

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

50A

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 50A, 10V

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

RoHS Status :

Non-RoHS Compliant

Pin Count :

4

Additional Feature :

LOGIC LEVEL COMPATIBLE

Voltage - Rated DC :

25V

Input Capacitance (Ciss) (Max) @ Vds :

2390pF @ 15V

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Power Dissipation-Max :

71W Tc

FET Type :

N-Channel

Case Connection :

DRAIN

Number of Elements :

1

Mount :

Surface Mount

Drain-source On Resistance-Max :

0.0062Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

MATTE TIN

Current Rating :

50A