IPB26CNE8N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

OptiMOS™

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

35A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

4

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 40V

Published :

2006

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

85V

Drain to Source Voltage (Vdss) :

85V

Avalanche Energy Rating (Eas) :

65 mJ

Power Dissipation-Max :

71W Tc

FET Type :

N-Channel

Terminal Form :

Gull wing

Number of Elements :

1

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

140A

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

26m Ω @ 35A, 10V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.026ohm

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 39μA

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99