IPB25N06S3-25

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Rise Time :

27ns

Rds On (Max) @ Id, Vgs :

24.8m Ω @ 15A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Published :

2007

Terminal Finish :

MATTE TIN

Turn-Off Delay Time :

16 ns

Peak Reflow Temperature (Cel) :

260

JESD-30 Code :

R-PSSO-G2

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

25A

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Series :

OptiMOS™

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Pin Count :

4

Fall Time (Typ) :

27 ns

Mount :

Surface Mount

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Element Configuration :

Single

Drain to Source Breakdown Voltage :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

48W

Power Dissipation-Max :

48W Tc

Terminal Form :

Gull wing

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

41nC @ 10V

Voltage - Rated DC :

55V

Number of Terminations :

2

Current Rating :

25A

Gate to Source Voltage (Vgs) :

20V

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

Lead Free :

Lead Free

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1862pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 20µA

Avalanche Energy Rating (Eas) :

60 mJ

Transistor Element Material :

SILICON