IPB25N06S3L-22

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Rated DC :

55V

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Rise Time :

26ns

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2260pF @ 25V

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.0213Ohm

Pulsed Drain Current-Max (IDM) :

100A

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Drain to Source Breakdown Voltage :

55V

Mount :

Surface Mount

Continuous Drain Current (ID) :

25A

Gate to Source Voltage (Vgs) :

16V

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

21.3m Ω @ 17A, 10V

FET Type :

N-Channel

JESD-609 Code :

e3

Power Dissipation-Max :

50W Tc

Published :

2007

Current Rating :

25A

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

120 mJ

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Fall Time (Typ) :

43 ns

Qualification Status :

Not Qualified

Power Dissipation :

50W

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±16V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Elements :

1

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Number of Terminations :

2

Turn-Off Delay Time :

30 ns

Series :

OptiMOS™

Terminal Finish :

MATTE TIN

Pin Count :

4

Vgs(th) (Max) @ Id :

2.2V @ 20μA

ECCN Code :

EAR99