IPB26CN10NGATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

ECCN Code :

EAR99

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

100V

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

26m Ω @ 35A, 10V

Vgs (Max) :

±20V

Published :

2011

Number of Pins :

3

Mount :

Surface Mount

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

4

Continuous Drain Current (ID) :

35A

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 39μA

Peak Reflow Temperature (Cel) :

260

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

140A

Avalanche Energy Rating (Eas) :

65 mJ

Drain-source On Resistance-Max :

0.026ohm

RoHS Status :

RoHS Compliant

DS Breakdown Voltage-Min :

100V

Input Capacitance (Ciss) (Max) @ Vds :

2070pF @ 50V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

71W Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

JESD-609 Code :

e3

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Series :

OptiMOS™

Configuration :

SINGLE WITH BUILT-IN DIODE