IPB26CN10N

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Manufacturer :

Infineon Technologies AG

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Power Dissipation-Max (Abs) :

71 W

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

TO-263AB

Package Shape :

RECTANGULAR

Reach Compliance Code :

Unknown

Case Connection :

DRAIN

Subcategory :

FET General Purpose Power

Number of Terminals :

2

Polarity/Channel Type :

N-Channel

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

140 A

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Pin Count :

4

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

65 mJ

Terminal Position :

Single

Drain-source On Resistance-Max :

0.026 Ω

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

35 A

DS Breakdown Voltage-Min :

100 V

FET Technology :

METAL-OXIDE SEMICONDUCTOR