IPB260N06N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 30V

Pulsed Drain Current-Max (IDM) :

108A

Drain to Source Voltage (Vdss) :

60V

Series :

OptiMOS™

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

yes

Number of Terminations :

2

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

27A Tc

JESD-30 Code :

R-PSSO-G2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.0257Ohm

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Published :

2011

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

13 mJ

Vgs(th) (Max) @ Id :

4V @ 11µA

Rds On (Max) @ Id, Vgs :

25.7m Ω @ 27A, 10V

Terminal Position :

Single

Power Dissipation-Max :

36W Tc

Drain Current-Max (Abs) (ID) :

27A

Transistor Element Material :

SILICON

Pin Count :

4

ECCN Code :

EAR99

JESD-609 Code :

e3

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

60V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount