IPB020N10N5LFATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

840pF @ 50V

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

29A

Drain to Source Breakdown Voltage :

100V

Height :

4.7mm

Power Dissipation :

313W

FET Type :

N-Channel

Turn On Delay Time :

7 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

OptiMOS™-5

Published :

2013

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

2mOhm @ 100A, 10V

Drain to Source Voltage (Vdss) :

100V

Vgs(th) (Max) @ Id :

4.1V @ 270μA

Max Junction Temperature (Tj) :

150°C

Drain to Source Resistance :

1.8MOhm

Power Dissipation-Max :

313W Tc

Gate to Source Voltage (Vgs) :

20V

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

13 Weeks

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 10V

Supplier Device Package :

PG-TO263-3

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Turn-Off Delay Time :

128 ns

Operating Temperature :

-55°C~150°C TJ