IPA70R750P7SXKSA1
- Mfr.Part #
- IPA70R750P7SXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 700V 6.5A TO220
- Stock
- 400
- In Stock :
- 400
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3 Full Pack
- JESD-30 Code :
- R-PSFM-T3
- Power Dissipation-Max :
- 21.2W Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 306pF @ 400V
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Surface Mount :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- DS Breakdown Voltage-Min :
- 700V
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 1.4A, 10V
- Factory Lead Time :
- 18 Weeks
- Vgs(th) (Max) @ Id :
- 3.5V @ 70μA
- Drain-source On Resistance-Max :
- 0.75Ohm
- Published :
- 2014
- Pulsed Drain Current-Max (IDM) :
- 15.4A
- Operating Mode :
- ENHANCEMENT MODE
- Case Connection :
- Isolated
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±16V
- Drain to Source Voltage (Vdss) :
- 700V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 8.3nC @ 400V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 6.5A Tc
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Series :
- CoolMOS™ P7
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -40°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- IPA70R750P7SXKSA1

N-Channel Tube 750m Ω @ 1.4A, 10V ±16V 306pF @ 400V 8.3nC @ 400V 700V TO-220-3 Full Pack
IPA70R750P7SXKSA1 Overview
A device's maximal input capacitance is 306pF @ 400V, which is defined as the capacitance between its input terminals with either input grounded.In terms of pulsed drain current, it has a maximum of 15.4A, which is its maximum rated peak drain current.To maintain normal operation, it is recommended that the DS breakdown voltage be above 700V.This transistor requires a 700V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IPA70R750P7SXKSA1 Features
based on its rated peak drain current 15.4A.
a 700V drain to source voltage (Vdss)
IPA70R750P7SXKSA1 Applications
There are a lot of Infineon Technologies
IPA70R750P7SXKSA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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