IPA70R450P7SXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

25.9A

Gate Charge (Qg) (Max) @ Vgs :

13.1nC @ 400V

JESD-609 Code :

e3

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-40°C~150°C TJ

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Published :

2014

Current - Continuous Drain (Id) @ 25°C :

10A

Power Dissipation-Max :

22.7W Tc

Drain to Source Voltage (Vdss) :

700V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

Rds On (Max) @ Id, Vgs :

450m Ω @ 2.3A, 10V

Surface Mount :

No

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

DS Breakdown Voltage-Min :

700V

Packaging :

Tube

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.45Ohm

Input Capacitance (Ciss) (Max) @ Vds :

424pF @ 400V

Series :

CoolMOS™ P7

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-220-3 Full Pack

Vgs (Max) :

±16V

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Vgs(th) (Max) @ Id :

3.5V @ 120μA