IMZ4T108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

JESD-609 Code :

e1

Operating Temperature :

150°C TJ

Voltage - Rated DC :

32V

Transistor Type :

NPN, PNP

Pin Count :

6

Max Breakdown Voltage :

32V

Power Dissipation :

300mW

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Element Configuration :

Dual

Collector Base Voltage (VCBO) :

40V

Mount :

Surface Mount

ECCN Code :

EAR99

Package / Case :

SC-74, SOT-457

hFE Min :

120

Base Part Number :

*MZ4

Current - Collector Cutoff (Max) :

100nA ICBO

Number of Elements :

2

Collector Emitter Voltage (VCEO) :

32V

Mounting Type :

Surface Mount

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 100mA 3V

RoHS Status :

ROHS3 Compliant

Number of Pins :

6

Max Collector Current :

500mA

Transition Frequency :

250MHz

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Pbfree Code :

yes

Termination :

SMD/SMT

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.75

Frequency - Transition :

250MHz 200MHz

Current Rating :

500mA

Published :

1998

Vce Saturation (Max) @ Ib, Ic :

600mV @ 50mA, 500mA / 600mV @ 30mA, 300mA

Gain Bandwidth Product :

250MHz

Radiation Hardening :

No

Max Power Dissipation :

300mW

Emitter Base Voltage (VEBO) :

-5V

Factory Lead Time :

4 Weeks

Terminal Finish :

TIN SILVER COPPER

Collector Emitter Breakdown Voltage :

32V

Number of Terminations :

6

Time@Peak Reflow Temperature-Max (s) :

10

Polarity :

NPN, PNP

Terminal Form :

Gull wing