IMZ2AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Transistor Type :

NPN, PNP

Max Output Current :

150mA

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Operating Temperature :

150°C TJ

hFE Min :

120

Mounting Type :

Surface Mount

Published :

2004

Time@Peak Reflow Temperature-Max (s) :

10

Frequency - Transition :

180MHz 140MHz

JESD-30 Code :

R-PDSO-G6

Number of Pins :

74

HTS Code :

8541.21.00.75

Mount :

Surface Mount

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Package / Case :

SC-74, SOT-457

Transition Frequency :

180MHz

Lead Free :

Lead Free

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

50V

Continuous Collector Current :

150mA

Current Rating :

150mA

Vce Saturation (Max) @ Ib, Ic :

400mV @ 5mA, 50mA / 500mV @ 5mA, 50mA

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Number of Elements :

2

Terminal Finish :

TIN SILVER COPPER

VCEsat-Max :

0.4 V

Transistor Application :

SWITCHING

Gain Bandwidth Product :

180MHz

Pin Count :

6

Collector Base Voltage (VCBO) :

60V

Base Part Number :

*MZ2

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

50V

Max Collector Current :

150mA

Number of Terminations :

6

JESD-609 Code :

e1

Polarity :

NPN, PNP

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

300mW

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Emitter Base Voltage (VEBO) :

7V

Current - Collector Cutoff (Max) :

100nA ICBO

Operating Supply Voltage :

50V