IMX9T110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current Rating :

500mA

Max Breakdown Voltage :

20V

Max Power Dissipation :

300mW

Factory Lead Time :

17 Weeks

Operating Temperature :

150°C TJ

Element Configuration :

Dual

Collector Emitter Saturation Voltage :

180mV

Continuous Collector Current :

500mA

Transistor Type :

2 NPN (Dual)

DC Current Gain (hFE) (Min) @ Ic, Vce :

560 @ 10mA 3V

Collector Emitter Breakdown Voltage :

20V

Vce Saturation (Max) @ Ib, Ic :

400mV @ 20mA, 500mA

Terminal Finish :

TIN SILVER COPPER

Time@Peak Reflow Temperature-Max (s) :

10

VCEsat-Max :

0.4 V

Mounting Type :

Surface Mount

Pbfree Code :

yes

HTS Code :

8541.21.00.75

Transistor Application :

AMPLIFIER

Packaging :

Tape and Reel (TR)

Polarity :

NPN

Mount :

Surface Mount

hFE Min :

560

Number of Terminations :

6

Current - Collector Cutoff (Max) :

500nA ICBO

Collector Base Voltage (VCBO) :

25V

Base Part Number :

*MX9

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gain Bandwidth Product :

350MHz

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

12V

Max Collector Current :

500mA

Collector Emitter Voltage (VCEO) :

20V

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

20V

Radiation Hardening :

No

Published :

2000

Transistor Element Material :

SILICON

Transition Frequency :

350MHz

Lead Free :

Lead Free

Terminal Form :

Gull wing

ECCN Code :

EAR99

Package / Case :

SC-74, SOT-457

REACH SVHC :

No SVHC

JESD-609 Code :

e1

Number of Pins :

6

Number of Elements :

2

Pin Count :

6