IMT3AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Max Breakdown Voltage :

50V

Current - Collector Cutoff (Max) :

100nA ICBO

Packaging :

Tape and Reel (TR)

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Package / Case :

SC-74, SOT-457

Mount :

Surface Mount

Collector Base Voltage (VCBO) :

60V

Number of Elements :

2

Emitter Base Voltage (VEBO) :

-6V

Transistor Element Material :

SILICON

Max Power Dissipation :

300mW

Terminal Form :

Gull wing

VCEsat-Max :

0.5 V

Gain Bandwidth Product :

140MHz

Element Configuration :

Dual

Terminal Finish :

TIN SILVER COPPER

Time@Peak Reflow Temperature-Max (s) :

10

Operating Temperature :

150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Type :

2 PNP (Dual)

REACH SVHC :

No SVHC

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Collector Emitter Saturation Voltage :

-500mV

Transition Frequency :

140MHz

Polarity :

PNP

ECCN Code :

EAR99

Published :

2004

Base Part Number :

MT3

Max Collector Current :

150mA

JESD-609 Code :

e1

Pbfree Code :

yes

hFE Min :

120

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Voltage - Rated DC :

-50V

Number of Pins :

6

Transistor Application :

AMPLIFIER

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

500mV

Radiation Hardening :

No

Number of Terminations :

6

Factory Lead Time :

10 Weeks

Power Dissipation :

300mW

Termination :

SMD/SMT

Frequency :

140MHz

Pin Count :

6

Current Rating :

-150mA

Collector Emitter Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant