IMT2AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Pin Count :

6

Mount :

Surface Mount

Gain Bandwidth Product :

140MHz

Transistor Application :

AMPLIFIER

Voltage - Rated DC :

-50V

hFE Min :

120

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

10 Weeks

Number of Terminations :

6

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Lead Free :

Lead Free

Package / Case :

SC-74, SOT-457

Radiation Hardening :

No

ECCN Code :

EAR99

Power Dissipation :

300mW

HTS Code :

8541.21.00.75

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

-60V

Transition Frequency :

140MHz

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Pins :

6

Number of Elements :

2

JESD-609 Code :

e1

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

10

Max Breakdown Voltage :

50V

Base Part Number :

MT2

Max Collector Current :

150mA

Pbfree Code :

yes

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

50V

VCEsat-Max :

0.5 V

Current - Collector Cutoff (Max) :

100nA ICBO

Current Rating :

-150mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Operating Temperature :

150°C TJ

Published :

2004

Transistor Type :

2 PNP (Dual)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Max Power Dissipation :

300mW

Element Configuration :

Dual

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Emitter Base Voltage (VEBO) :

-6V

Collector Emitter Voltage (VCEO) :

500mV