IMT2AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

hFE Min :

120

RoHS Status :

ROHS3 Compliant

Transition Frequency :

140MHz

Published :

2004

Element Configuration :

Dual

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Collector Emitter Voltage (VCEO) :

500mV

Transistor Application :

AMPLIFIER

Voltage - Rated DC :

-50V

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

300mW

Pin Count :

6

Max Collector Current :

150mA

Radiation Hardening :

No

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

Gain Bandwidth Product :

140MHz

Peak Reflow Temperature (Cel) :

260

Package / Case :

SC-74, SOT-457

REACH SVHC :

No SVHC

Number of Pins :

6

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

6

Transistor Element Material :

SILICON

Number of Elements :

2

Collector Base Voltage (VCBO) :

-60V

JESD-609 Code :

e1

Current Rating :

-150mA

VCEsat-Max :

0.5 V

Power Dissipation :

300mW

Time@Peak Reflow Temperature-Max (s) :

10

Terminal Form :

Gull wing

Current - Collector Cutoff (Max) :

100nA ICBO

Base Part Number :

MT2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

10 Weeks

HTS Code :

8541.21.00.75

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Max Breakdown Voltage :

50V

Emitter Base Voltage (VEBO) :

-6V

Transistor Type :

2 PNP (Dual)

ECCN Code :

EAR99

Mount :

Surface Mount

Pbfree Code :

yes

Mounting Type :

Surface Mount

Polarity :

PNP