IMT2AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays

Current - Collector Cutoff (Max) :

100nA ICBO

ECCN Code :

EAR99

Power Dissipation :

300mW

JESD-609 Code :

e1

Operating Temperature :

150°C TJ

HTS Code :

8541.21.00.75

Element Configuration :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transition Frequency :

140MHz

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Emitter Base Voltage (VEBO) :

-6V

Number of Terminations :

6

VCEsat-Max :

0.5 V

Lead Free :

Lead Free

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

500mV

Transistor Application :

AMPLIFIER

Collector Base Voltage (VCBO) :

-60V

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

500mV @ 5mA, 50mA

Current Rating :

-150mA

DC Current Gain (hFE) (Min) @ Ic, Vce :

120 @ 1mA 6V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Published :

2004

Radiation Hardening :

No

Package / Case :

SC-74, SOT-457

Number of Pins :

6

Mounting Type :

Surface Mount

Gain Bandwidth Product :

140MHz

Voltage - Rated DC :

-50V

Transistor Element Material :

SILICON

hFE Min :

120

Transistor Type :

2 PNP (Dual)

Number of Elements :

2

Max Collector Current :

150mA

Factory Lead Time :

10 Weeks

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

REACH SVHC :

No SVHC

Polarity :

PNP

Max Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

Pin Count :

6

Time@Peak Reflow Temperature-Max (s) :

10

Base Part Number :

MT2

Collector Emitter Breakdown Voltage :

50V