IKW75N60H3
Or copy the link below:
- Mfr.Part #
- IKW75N60H3
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IKW75N60 - DISCRETE IGBT WITH AN
- Stock
- 25,363
- In Stock ：
- 25,363
Request A Quote(RFQ)
- * Fullname:
- * Company:
- * E-Mail:
- Phone:
- Comment:
- * Quantity:
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Max Power Dissipation :
- 428W
- Published :
- 2005
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 600V
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- IGBT Type :
- Trench Field Stop
- Width :
- 5.31mm
- Input Type :
- Standard
- Terminal Finish :
- Tin (Sn)
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 75A
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-247-3
- Power - Max :
- 428W
- Factory Lead Time :
- 14 Weeks
- Test Condition :
- 400V, 75A, 5.2 Ω, 15V
- Operating Temperature :
- -40°C~175°C TJ
- Td (on/off) @ 25°C :
- 31ns/265ns
- Mounting Type :
- Through Hole
- Transistor Application :
- POWER CONTROL
- Gate Charge :
- 470nC
- Switching Energy :
- 3mJ (on), 1.7mJ (off)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 2.3V
- Number of Terminations :
- 3
- Mount :
- Through Hole
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Reverse Recovery Time :
- 190 ns
- Packaging :
- Tube
- Series :
- TrenchStop®
- Collector Emitter Voltage (VCEO) :
- 600V
- Pbfree Code :
- yes
- Max Collector Current :
- 80A
- Number of Pins :
- 3
- Polarity/Channel Type :
- N-Channel
- Current - Collector Pulsed (Icm) :
- 225A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Length :
- 15.87mm
- Height :
- 20.7mm
- Datasheets
- IKW75N60H3
IKW75N60H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IKW75N60H3FKSA1 Description
When employing this Infineon Technologies IKW75N60H3FKSA1 IGBT transistor, don't be frightened to increase the amps in your equipment. The collector emitter voltage is up to 600 V. It can dissipate up to 428000 mW of power. It is created in just one design. The operating temperature range for this IGBT transistor is -40 °C to 175 °C.
IKW75N60H3FKSA1 Features
-
Package: TO247-3
-
Package/Case: TO-247-3
-
Device Package: PG-TO247-3
-
RoHS: Lead free / RoHS Compliant
IKW75N60H3FKSA1 Applications
-
Automotive
-
Personal electronics
-
Communications equipment
You may place an order without registering to Chip IC. We strongly recommend that you log in before purchasing as you can track your order at any time.
RFQ (Request for Quotations)It is recommended to send RFQ to get the latest prices and stock availability about the part.Our sales will reply to your inquiry within 24 hours.
Payment MethodFor your convenience, we accept multiple payment methods in USD, Such as:PayPal, Credit Card, and wire transfer.
IMPORTANT NOTICEYou may place an order without registering to 1. You'll receive an order confirmations by e-mail soon . (Please remember to check the spam box if you didn't hear from us). 2. Since stock availability and prices may change at any time, the sales will reconfirm the order details and update you at soonest time.
Most of our products are shipped via FEDEX,DHL,UPS and SF EXPRESS...
Shipping CostShipping Cost starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.).If customer have shipping account, we can make shipment under customer’s shipping account with freight collect directly.
The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
Once the goods are shipped, estimated delivery time depends on the shipping methods you chose. You can track it by the tracking no.
Manufacturer related products
Catalog related products
Related products
- Follow Us
-
- Payment
-
- Subscribe
- Certification
-
-
