IKW25N120H3FKSA1
- Mfr.Part #
- IKW25N120H3FKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 1200V 50A 326W TO247-3
- Stock
- 44
- In Stock :
- 44
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 50A
- Series :
- TrenchStop®
- Pbfree Code :
- yes
- Current - Collector Pulsed (Icm) :
- 100A
- JESD-30 Code :
- R-PSFM-T3
- Pin Count :
- 3
- Td (on/off) @ 25°C :
- 27ns/277ns
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Package / Case :
- TO-247-3
- Terminal Position :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -40°C~175°C TJ
- Turn On Time :
- 61 ns
- Input Type :
- Standard
- Factory Lead Time :
- 16 Weeks
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin (Sn)
- Surface Mount :
- No
- Power - Max :
- 326W
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- POWER CONTROL
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Test Condition :
- 600V, 25A, 23 Ω, 15V
- Published :
- 2008
- Turn Off Time-Nom (toff) :
- 397 ns
- IGBT Type :
- Trench Field Stop
- Reverse Recovery Time :
- 290ns
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 25A
- Gate Charge :
- 115nC
- Switching Energy :
- 2.65mJ
- Number of Terminations :
- 3
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Datasheets
- IKW25N120H3FKSA1

IKW25N120H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IKW25N120H3FKSA1 is a 1200 V IGBT equipped with an anti-parallel diode that is part of the TO-247 package. It has a diode that is free-wheeling within the TO-247 package that provides the ideal combination of switching and conduction losses. The main characteristic of this family is a MOSFET-like switch-off that results in low turn-off losses.
IKW25N120H3FKSA1 Features
Low switching and conduction losses
Very good EMI behavior
Can be used with a small gate resistor for reduced delay time and voltage overshoot
High current density
Best-in-class 1200 V IGBT efficiency and EMI behavior
IKW25N120H3FKSA1 Applications
Industrial Heating and Welding
Solutions for solar energy systems
Uninterruptible power supply
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