IKW25N120H3FKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Power - Max :

326W

Current - Collector (Ic) (Max) :

50A

Turn Off Time-Nom (toff) :

397 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-247-3

Pbfree Code :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-40°C~175°C TJ

Series :

TrenchStop®

Number of Elements :

1

Gate Charge :

115nC

Surface Mount :

No

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

Published :

2008

Voltage - Collector Emitter Breakdown (Max) :

1200V

IGBT Type :

Trench Field Stop

Transistor Application :

POWER CONTROL

Test Condition :

600V, 25A, 23 Ω, 15V

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Current - Collector Pulsed (Icm) :

100A

Terminal Position :

Single

Reverse Recovery Time :

290ns

Number of Terminations :

3

Turn On Time :

61 ns

Pin Count :

3

Polarity/Channel Type :

N-Channel

Td (on/off) @ 25°C :

27ns/277ns

JESD-30 Code :

R-PSFM-T3

Factory Lead Time :

16 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Switching Energy :

2.65mJ

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 25A