IKW25N120H3FKSA1

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Mfr.Part #
IKW25N120H3FKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT 1200V 50A 326W TO247-3
Stock
44
In Stock :
44

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Number of Elements :
1
Current - Collector (Ic) (Max) :
50A
Series :
TrenchStop®
Pbfree Code :
yes
Current - Collector Pulsed (Icm) :
100A
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Td (on/off) @ 25°C :
27ns/277ns
JESD-609 Code :
e3
ECCN Code :
EAR99
Package / Case :
TO-247-3
Terminal Position :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Operating Temperature :
-40°C~175°C TJ
Turn On Time :
61 ns
Input Type :
Standard
Factory Lead Time :
16 Weeks
Mounting Type :
Through Hole
Transistor Element Material :
SILICON
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Terminal Finish :
Tin (Sn)
Surface Mount :
No
Power - Max :
326W
Packaging :
Tube
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
POWER CONTROL
RoHS Status :
ROHS3 Compliant
Configuration :
SINGLE WITH BUILT-IN DIODE
Test Condition :
600V, 25A, 23 Ω, 15V
Published :
2008
Turn Off Time-Nom (toff) :
397 ns
IGBT Type :
Trench Field Stop
Reverse Recovery Time :
290ns
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 25A
Gate Charge :
115nC
Switching Energy :
2.65mJ
Number of Terminations :
3
Voltage - Collector Emitter Breakdown (Max) :
1200V
Datasheets
IKW25N120H3FKSA1
Introducing Transistors - IGBTs - Single Infineon Technologies IKW25N120H3FKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-247-3, Operating Temperature:-40°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, IKW25N120H3FKSA1 pinout, IKW25N120H3FKSA1 datasheet PDF, IKW25N120H3FKSA1 amp .Beyond Transistors - IGBTs - Single Infineon Technologies IKW25N120H3FKSA1 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IKW25N120H3FKSA1


IKW25N120H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IKW25N120H3FKSA1 Description


IKW25N120H3FKSA1 is a 1200 V IGBT equipped with an anti-parallel diode that is part of the TO-247 package. It has a diode that is free-wheeling within the TO-247 package that provides the ideal combination of switching and conduction losses. The main characteristic of this family is a MOSFET-like switch-off that results in low turn-off losses.


IKW25N120H3FKSA1 Features


Low switching and conduction losses
Very good EMI behavior
Can be used with a small gate resistor for reduced delay time and voltage overshoot
High current density
Best-in-class 1200 V IGBT efficiency and EMI behavior



IKW25N120H3FKSA1 Applications


Industrial Heating and Welding
Solutions for solar energy systems
Uninterruptible power supply
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