IKP20N65F5
- Mfr.Part #
- IKP20N65F5
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IKP20N65 - DISCRETE IGBT WITH AN
- Stock
- 48,157
- In Stock :
- 48,157
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Turn Off Time-Nom (toff) :
- 211 ns
- Forward Voltage :
- 1.45V
- Element Configuration :
- Single
- Series :
- TRENCHSTOP™
- Transistor Application :
- POWER CONTROL
- Current - Collector Pulsed (Icm) :
- 60A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Turn On Time :
- 32 ns
- Collector Emitter Saturation Voltage :
- 1.6V
- Package / Case :
- TO-220-3
- Factory Lead Time :
- 16 Weeks
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- Collector Emitter Voltage (VCEO) :
- 650V
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Vce(on) (Max) @ Vge, Ic :
- 2.1V @ 15V, 20A
- Published :
- 2014
- Number of Elements :
- 1
- Input Type :
- Standard
- Terminal Finish :
- Tin (Sn)
- Reverse Recovery Time :
- 53 ns
- Max Power Dissipation :
- 125W
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Breakdown Voltage :
- 650V
- IGBT Type :
- Trench
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Polarity/Channel Type :
- N-Channel
- Weight :
- 6.000006g
- Max Collector Current :
- 42A
- Switching Energy :
- 160μJ (on), 60μJ (off)
- Test Condition :
- 400V, 10A, 32 Ω, 15V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge :
- 48nC
- JESD-609 Code :
- e3
- Case Connection :
- COLLECTOR
- Td (on/off) @ 25°C :
- 20ns/165ns
- Power - Max :
- 125W
- Operating Temperature :
- -40°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IKP20N65F5

IKP20N65F5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IKP20N65F5XKSA1 Features
High-speed F5 technology offering
Best-in-Class efficiency in hard switching and resonant
topologies
650V breakdown voltage
Low Qg
IGBT co-packed with RAPID 1 fast and soft antiparallel diode
Maximum junction temperature 175'C
Qualified according to JEDEC for target applications
Pb-ree lead plating; RoHS compliant
IKP20N65F5XKSA1 Applications
Solar converters
Uninterruptible power supplies
Welding converters
Mid to high-range switching frequency converters
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