IKB40N65EF5ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Input Type :

Standard

Power - Max :

250W

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Current - Collector (Ic) (Max) :

74A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-40°C~175°C TJ

Current - Collector Pulsed (Icm) :

160A

Transistor Application :

POWER CONTROL

Surface Mount :

yes

JESD-30 Code :

R-PSSO-G2

IGBT Type :

Trench Field Stop

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 40A

Peak Reflow Temperature (Cel) :

260

Switching Energy :

420μJ (on), 100μJ (off)

Td (on/off) @ 25°C :

22ns/160ns

Factory Lead Time :

26 Weeks

Reverse Recovery Time :

83ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Collector Emitter Breakdown (Max) :

650V

Series :

TrenchStop™ 5

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Number of Terminations :

2

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Case Connection :

COLLECTOR

Test Condition :

400V, 40A, 15 Ω, 15V

Turn On Time :

57 ns

Gate Charge :

95nC

Turn Off Time-Nom (toff) :

199 ns