IHW20N135R3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Test Condition :

600V, 20A, 15 Ω, 15V

Packaging :

Tube

Current - Collector (Ic) (Max) :

40A

Td (on/off) @ 25°C :

-/335ns

Mounting Type :

Through Hole

Turn Off Time-Nom (toff) :

385 ns

Power Dissipation-Max (Abs) :

310W

Series :

TrenchStop®

Polarity/Channel Type :

N-Channel

Terminal Position :

Single

ECCN Code :

EAR99

Gate-Emitter Voltage-Max :

25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-40°C~175°C TJ

Gate-Emitter Thr Voltage-Max :

6.4V

Published :

2008

Gate Charge :

195nC

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-247-3

RoHS Status :

RoHS Compliant

Transistor Application :

POWER CONTROL

Pin Count :

3

Vce(on) (Max) @ Vge, Ic :

1.8V @ 15V, 20A

Number of Elements :

1

Transistor Element Material :

SILICON

Factory Lead Time :

14 Weeks

Turn On Time :

505 ns

Power - Max :

310W

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Type :

Standard

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSFM-T3

Switching Energy :

1.3mJ (off)

Pbfree Code :

yes

Current - Collector Pulsed (Icm) :

60A

JESD-609 Code :

e3

Reach Compliance Code :

Compliant

IGBT Type :

Trench

Surface Mount :

No

Terminal Finish :

Tin (Sn)

Voltage - Collector Emitter Breakdown (Max) :

1350V