IHP10T120
- Mfr.Part #
- IHP10T120
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT 1200V 16A 138W TO220-3
- Stock
- 3,621
- In Stock :
- 3,621
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Turn On Time :
- 69 ns
- Operating Temperature :
- -40°C~150°C TJ
- Lead Free :
- Lead Free
- Input Type :
- Standard
- Td (on/off) @ 25°C :
- 45ns/520ns
- Vce(on) (Max) @ Vge, Ic :
- 2.2V @ 15V, 10A
- Radiation Hardening :
- No
- Transistor Application :
- Motor Control
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 1.2kV
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Package / Case :
- TO-220-3
- JESD-30 Code :
- R-PSFM-T3
- Test Condition :
- 610V, 10A, 81 Ω, 15V
- RoHS Status :
- RoHS Compliant
- Case Connection :
- COLLECTOR
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Terminal Finish :
- Matte Tin (Sn)
- Max Collector Current :
- 16A
- JEDEC-95 Code :
- TO-220AB
- IGBT Type :
- Trench Field Stop
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 138W
- Turn Off Time-Nom (toff) :
- 769 ns
- Gate-Emitter Voltage-Max :
- 20V
- JESD-609 Code :
- e3
- Reverse Recovery Time :
- 185 ns
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Current - Collector Pulsed (Icm) :
- 24A
- Pin Count :
- 3
- Series :
- TrenchStop®
- Published :
- 2009
- Switching Energy :
- 1.46mJ
- Gate Charge :
- 53nC
- Number of Terminations :
- 3
- Packaging :
- Tube
- Max Power Dissipation :
- 138W
- Collector Emitter Breakdown Voltage :
- 1.2kV
- Datasheets
- IHP10T120

IHP10T120 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IHP10T120 Features
Short circuit withstand time – 10μs
Designed for :
- Soft Switching Applications
- Induction Heating
TrenchStop and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature-stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
- Very low Vce(sat)
Very soft, fast recovery anti-parallel EmCon? HE diode
Low EMI
Qualified according to JEDEC1 for target applications
Application-specific optimization of inverse diode
Pb-free lead plating; RoHS compliant
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