IHD06N60RA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

POWER CONTROL

Polarity/Channel Type :

N-Channel

Number of Elements :

1

Case Connection :

COLLECTOR

Max Collector Current :

12A

Collector Emitter Breakdown Voltage :

600V

IGBT Type :

Trench

JEDEC-95 Code :

TO-252AA

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 6A

Element Configuration :

Single

Terminal Finish :

MATTE TIN

Series :

TrenchStop®

JESD-30 Code :

R-PSSO-G2

Published :

2012

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Gate-Emitter Thr Voltage-Max :

5.7V

Surface Mount :

yes

Factory Lead Time :

17 Weeks

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-40°C~175°C TJ

Collector Emitter Voltage (VCEO) :

600V

Halogen Free :

Not Halogen Free

Power - Max :

88W

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

ECCN Code :

EAR99

Td (on/off) @ 25°C :

25ns/125ns

Transistor Element Material :

SILICON

Turn Off Time-Nom (toff) :

325 ns

Pin Count :

3

Gate Charge :

42nC

Gate-Emitter Voltage-Max :

20V

Terminal Form :

Gull wing

Current - Collector Pulsed (Icm) :

18A

Max Power Dissipation :

88W

Switching Energy :

150μJ

Number of Pins :

3

Test Condition :

400V, 6A, 14.7 Ω, 15V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

RoHS Status :

RoHS Compliant

Input Type :

Standard

Pbfree Code :

yes