IGZ100N65H5XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Pbfree Code :

yes

Configuration :

Single

Input Type :

Standard

Case Connection :

COLLECTOR

JESD-609 Code :

e3

Number of Pins :

4

Factory Lead Time :

16 Weeks

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-40°C~175°C TJ

Mounting Type :

Through Hole

Test Condition :

400V, 50A, 8 Ω, 15V

Transistor Application :

POWER CONTROL

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Halogen Free :

Halogen Free

Packaging :

Tube

Collector Emitter Breakdown Voltage :

650V

Published :

2008

Number of Terminations :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Package / Case :

TO-247-4

Terminal Position :

Single

Transistor Element Material :

SILICON

Power - Max :

536W

Switching Energy :

850μJ (on), 770μJ (off)

Td (on/off) @ 25°C :

30ns/421ns

Max Power Dissipation :

536W

Max Collector Current :

161A

Series :

TrenchStop™ 5

Turn On Time :

40 ns

Lead Free :

Lead Free

Turn Off Time-Nom (toff) :

485 ns

Gate Charge :

210nC

Current - Collector Pulsed (Icm) :

400A

IGBT Type :

Trench

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 100A

Collector Emitter Voltage (VCEO) :

650V

Mount :

Through Hole