IGW75N60TFKSA1

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Mfr.Part #
IGW75N60TFKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT TRENCH/FS 600V 150A TO247-3
Stock
117
In Stock :
117

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Operating Temperature :
-40°C~175°C TJ
Mounting Type :
Through Hole
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
COLLECTOR
RoHS Status :
ROHS3 Compliant
Terminal Finish :
Tin (Sn)
Polarity/Channel Type :
N-Channel
Transistor Element Material :
SILICON
Voltage - Collector Emitter Breakdown (Max) :
600V
Number of Terminations :
3
Turn Off Time-Nom (toff) :
401 ns
Pin Count :
3
JESD-609 Code :
e3
Current - Collector (Ic) (Max) :
150A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Switching Energy :
4.5mJ
Gate Charge :
470nC
Input Type :
Standard
JESD-30 Code :
R-PSFM-T3
Current - Collector Pulsed (Icm) :
225A
Packaging :
Tube
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 75A
Qualification Status :
Not Qualified
JEDEC-95 Code :
TO-247AD
Factory Lead Time :
16 Weeks
Surface Mount :
No
Terminal Position :
Single
Number of Elements :
1
IGBT Type :
Trench Field Stop
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
POWER CONTROL
Power - Max :
428W
Pbfree Code :
yes
ECCN Code :
EAR99
Test Condition :
400V, 75A, 5 Ω, 15V
Package / Case :
TO-247-3
Td (on/off) @ 25°C :
33ns/330ns
Turn On Time :
69 ns
Published :
2008
Configuration :
Single
Series :
TrenchStop®
Datasheets
IGW75N60TFKSA1
Introducing Transistors - IGBTs - Single Infineon Technologies IGW75N60TFKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~175°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-247-3, IGW75N60TFKSA1 pinout, IGW75N60TFKSA1 datasheet PDF, IGW75N60TFKSA1 amp .Beyond Transistors - IGBTs - Single Infineon Technologies IGW75N60TFKSA1 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IGW75N60TFKSA1


IGW75N60TFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IGW75N60TFKSA1 Description

 

IGW75N60TFKSA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGW75N60TFKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IGW75N60TFKSA1 has the common source configuration.

 

 

IGW75N60TFKSA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IGW75N60TFKSA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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