IGW60T120FKSA1
- Mfr.Part #
- IGW60T120FKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT TRENCH 1200V 100A TO247-3
- Stock
- 10,508
- In Stock :
- 10,508
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector Pulsed (Icm) :
- 150A
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Operating Temperature :
- -40°C~150°C TJ
- Current - Collector (Ic) (Max) :
- 100A
- Td (on/off) @ 25°C :
- 50ns/480ns
- Switching Energy :
- 9.5mJ
- Test Condition :
- 600V, 60A, 10 Ω, 15V
- IGBT Type :
- Trench Field Stop
- Power - Max :
- 375W
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 16 Weeks
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- Vce(on) (Max) @ Vge, Ic :
- 2.4V @ 15V, 60A
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Series :
- TrenchStop®
- Turn On Time :
- 95 ns
- Terminal Position :
- Single
- Polarity/Channel Type :
- N-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- POWER CONTROL
- JEDEC-95 Code :
- TO-247AD
- Packaging :
- Tube
- Number of Elements :
- 1
- Published :
- 2008
- JESD-30 Code :
- R-PSFM-T3
- Gate Charge :
- 280nC
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-247-3
- Input Type :
- Standard
- Turn Off Time-Nom (toff) :
- 730 ns
- Pbfree Code :
- yes
- Datasheets
- IGW60T120FKSA1

IGW60T120FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IGW60T120FKSA1 Description
In TrenchStop? and field-stop technologies, the IGW60T120 is a Low Loss IGBT. Due to the combination of TrenchStop?-cell and field-stop idea, TrenchStop? IGBT technology significantly improves the device's static and dynamic performance. The use of an IGBT in conjunction with a soft recovery emitter-controlled diode reduces turn-on losses even more. Due to the optimum compromise between switching and conduction losses, the highest efficiency is achieved.
IGW60T120FKSA1 Features
-
Low gate charge
-
Low EMI emissions
-
Low switching losses
-
High device reliability
-
Very tight parameter distribution
-
10μs Short-circuit withstand time
-
High ruggedness, temperature stable behavior
-
Lowest Vce (sat) drop for lower conduction losses
-
Highest efficiency - Low conduction and switching losses
-
Very soft, fast recovery anti-parallel emitter controlled diode
-
Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
IGW60T120FKSA1 Applications
-
Alternative Energy
-
Power Management
-
Consumer Electronics
-
Maintenance & Repair
-
Motor Drive & Control
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