IGW60T120FKSA1

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Mfr.Part #
IGW60T120FKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGBT TRENCH 1200V 100A TO247-3
Stock
10,508
In Stock :
10,508

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Current - Collector Pulsed (Icm) :
150A
RoHS Status :
ROHS3 Compliant
Surface Mount :
No
Mounting Type :
Through Hole
Operating Temperature :
-40°C~150°C TJ
Current - Collector (Ic) (Max) :
100A
Td (on/off) @ 25°C :
50ns/480ns
Switching Energy :
9.5mJ
Test Condition :
600V, 60A, 10 Ω, 15V
IGBT Type :
Trench Field Stop
Power - Max :
375W
Terminal Finish :
Tin (Sn)
Number of Terminations :
3
Transistor Element Material :
SILICON
Configuration :
SINGLE WITH BUILT-IN DIODE
JESD-609 Code :
e3
ECCN Code :
EAR99
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Factory Lead Time :
16 Weeks
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pin Count :
3
Vce(on) (Max) @ Vge, Ic :
2.4V @ 15V, 60A
Voltage - Collector Emitter Breakdown (Max) :
1200V
Series :
TrenchStop®
Turn On Time :
95 ns
Terminal Position :
Single
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Application :
POWER CONTROL
JEDEC-95 Code :
TO-247AD
Packaging :
Tube
Number of Elements :
1
Published :
2008
JESD-30 Code :
R-PSFM-T3
Gate Charge :
280nC
Case Connection :
COLLECTOR
Package / Case :
TO-247-3
Input Type :
Standard
Turn Off Time-Nom (toff) :
730 ns
Pbfree Code :
yes
Datasheets
IGW60T120FKSA1
Introducing Transistors - IGBTs - Single Infineon Technologies IGW60T120FKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-40°C~150°C TJ, Number of Terminations:3, Package / Case:TO-247-3, IGW60T120FKSA1 pinout, IGW60T120FKSA1 datasheet PDF, IGW60T120FKSA1 amp .Beyond Transistors - IGBTs - Single Infineon Technologies IGW60T120FKSA1 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IGW60T120FKSA1


IGW60T120FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IGW60T120FKSA1 Description


In TrenchStop? and field-stop technologies, the IGW60T120 is a Low Loss IGBT. Due to the combination of TrenchStop?-cell and field-stop idea, TrenchStop? IGBT technology significantly improves the device's static and dynamic performance. The use of an IGBT in conjunction with a soft recovery emitter-controlled diode reduces turn-on losses even more. Due to the optimum compromise between switching and conduction losses, the highest efficiency is achieved.



IGW60T120FKSA1 Features


  • Low gate charge

  • Low EMI emissions

  • Low switching losses

  • High device reliability

  • Very tight parameter distribution

  • 10μs Short-circuit withstand time

  • High ruggedness, temperature stable behavior

  • Lowest Vce (sat) drop for lower conduction losses

  • Highest efficiency - Low conduction and switching losses

  • Very soft, fast recovery anti-parallel emitter controlled diode

  • Easy parallel switching capability due to positive temperature coefficient in Vce (sat)



IGW60T120FKSA1 Applications


  • Alternative Energy

  • Power Management

  • Consumer Electronics

  • Maintenance & Repair

  • Motor Drive & Control


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