IGW30N100TFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Pulsed (Icm) :

90A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Max Power Dissipation :

412W

JEDEC-95 Code :

TO-247AD

Element Configuration :

Single

Series :

TrenchStop®

Test Condition :

600V, 30A, 16 Ω, 15V

RoHS Status :

RoHS Compliant

Power - Max :

412W

Factory Lead Time :

14 Weeks

Lead Free :

Lead Free

Pbfree Code :

yes

Voltage - Collector Emitter Breakdown (Max) :

1000V

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 30A

Polarity/Channel Type :

N-Channel

Max Collector Current :

60A

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Collector Emitter Breakdown Voltage :

1kV

Collector Emitter Voltage (VCEO) :

1.9V

Package / Case :

TO-247-3

Transistor Application :

POWER CONTROL

Number of Elements :

1

Turn Off Time-Nom (toff) :

569 ns

Turn On Time :

54 ns

Input Type :

Standard

JESD-609 Code :

e3

IGBT Type :

Trench Field Stop

Terminal Finish :

Tin (Sn)

Pin Count :

3

Published :

2008

Qualification Status :

Not Qualified

Switching Energy :

3.8mJ

Td (on/off) @ 25°C :

33ns/535ns

Packaging :

Tube

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge :

217nC

Mounting Type :

Through Hole