IGW30N100TFKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Power - Max :

412W

Collector Emitter Voltage (VCEO) :

1.9V

JESD-609 Code :

e3

Current - Collector Pulsed (Icm) :

90A

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

60A

Mount :

Through Hole

JEDEC-95 Code :

TO-247AD

Published :

2008

IGBT Type :

Trench Field Stop

RoHS Status :

RoHS Compliant

Collector Emitter Breakdown Voltage :

1kV

Qualification Status :

Not Qualified

Turn On Time :

54 ns

Max Power Dissipation :

412W

Test Condition :

600V, 30A, 16 Ω, 15V

Switching Energy :

3.8mJ

Mounting Type :

Through Hole

Turn Off Time-Nom (toff) :

569 ns

ECCN Code :

EAR99

Factory Lead Time :

14 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Package / Case :

TO-247-3

Gate Charge :

217nC

Transistor Application :

POWER CONTROL

Pin Count :

3

Td (on/off) @ 25°C :

33ns/535ns

Polarity/Channel Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Voltage - Collector Emitter Breakdown (Max) :

1000V

Number of Pins :

3

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 30A

Lead Free :

Lead Free

Packaging :

Tube

Series :

TrenchStop®

Input Type :

Standard

Number of Terminations :

3

Number of Elements :

1

Transistor Element Material :

SILICON