IGP10N60TXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Vce(on) (Max) @ Vge, Ic :

2.05V @ 15V, 10A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

JESD-609 Code :

e3

Mounting Type :

Through Hole

Number of Pins :

3

Transistor Application :

POWER CONTROL

Max Collector Current :

20A

Operating Temperature :

-40°C~175°C TJ

Number of Terminations :

3

Pin Count :

3

Transistor Element Material :

SILICON

Mount :

Through Hole

Package / Case :

TO-220-3

Qualification Status :

Not Qualified

Halogen Free :

Halogen Free

Input Type :

Standard

Packaging :

Tube

Element Configuration :

Single

Test Condition :

400V, 10A, 23 Ω, 15V

Td (on/off) @ 25°C :

12ns/215ns

Factory Lead Time :

16 Weeks

Number of Elements :

1

Turn Off Time-Nom (toff) :

296 ns

Published :

2015

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn On Time :

21 ns

Switching Energy :

430μJ

Lead Free :

Lead Free

Case Connection :

COLLECTOR

Power - Max :

110W

IGBT Type :

NPT, Trench Field Stop

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

Series :

TrenchStop®

Gate Charge :

62nC

Max Power Dissipation :

110W

Collector Emitter Breakdown Voltage :

600V

Terminal Finish :

Tin (Sn)

Polarity/Channel Type :

N-Channel

Current - Collector Pulsed (Icm) :

30A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Voltage (VCEO) :

600V