IGP10N60TXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Collector Pulsed (Icm) :

30A

Case Connection :

COLLECTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Number of Pins :

3

Packaging :

Tube

Terminal Finish :

Tin (Sn)

JEDEC-95 Code :

TO-220AB

Collector Emitter Voltage (VCEO) :

600V

Qualification Status :

Not Qualified

Operating Temperature :

-40°C~175°C TJ

Lead Free :

Lead Free

Turn On Time :

21 ns

Collector Emitter Breakdown Voltage :

600V

Gate Charge :

62nC

Published :

2015

Number of Elements :

1

Max Power Dissipation :

110W

Test Condition :

400V, 10A, 23 Ω, 15V

Turn Off Time-Nom (toff) :

296 ns

Series :

TrenchStop®

Switching Energy :

430μJ

Polarity/Channel Type :

N-Channel

Td (on/off) @ 25°C :

12ns/215ns

Input Type :

Standard

IGBT Type :

NPT, Trench Field Stop

Transistor Application :

POWER CONTROL

Element Configuration :

Single

Halogen Free :

Halogen Free

Pin Count :

3

JESD-609 Code :

e3

Max Collector Current :

20A

Power - Max :

110W

Factory Lead Time :

16 Weeks

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Vce(on) (Max) @ Vge, Ic :

2.05V @ 15V, 10A

Number of Terminations :

3

Pbfree Code :

yes

Mounting Type :

Through Hole