IGP01N120H2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Configuration :

Single

Collector Emitter Breakdown Voltage :

1.2 kV

Length :

10 mm

Continuous Collector Current :

3.2

Power - Max :

28 W

Height :

9.25 mm

Product Type :

IGBT Transistors

RoHS :

Details

Product Category :

IGBT Transistors

Switching Energy :

140µJ

Operating Temperature :

-40°C ~ 150°C (TJ)

Current - Collector (Ic) (Max) :

3.2 A

Mounting Style :

Through Hole

Max Collector Current :

3.2 A

Voltage - Collector Emitter Breakdown (Max) :

1200 V

Collector Emitter Saturation Voltage :

2.2

Current - Collector Pulsed (Icm) :

3.5 A

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 1A

Max Operating Temperature :

150 °C

Subcategory :

IGBTs

Minimum Operating Temperature :

- 40 C

Td (on/off) @ 25°C :

13ns/370ns

Max Power Dissipation :

28 W

Packaging :

Tube

Package :

Bulk

Product Status :

Active

Manufacturer :

Infineon

IGBT Type :

-

Collector Emitter Voltage (VCEO) :

1.2 kV

Contact Plating :

Tin

Power Dissipation :

28

Series :

IGP01N120

Mounting Type :

Through Hole

Test Condition :

800V, 1A, 241Ohm, 15V

Gate Charge :

8.6 nC

Technology :

Si

Brand :

Infineon Technologies

Maximum Operating Temperature :

+ 150 C

Number of Pins :

3

Element Configuration :

Single

Min Operating Temperature :

-40 °C

Supplier Device Package :

PG-TO220-3-1

Package / Case :

TO-220-3

Halogen Free :

Halogen Free

Width :

4.4 mm

Input Type :

Standard