IGP01N120H2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Current - Collector (Ic) (Max) :

3.2 A

Configuration :

Single

Element Configuration :

Single

Gate Charge :

8.6 nC

Manufacturer :

Infineon

Number of Pins :

3

Max Power Dissipation :

28 W

Power Dissipation :

28

Power - Max :

28 W

Product Status :

Active

Operating Temperature :

-40°C ~ 150°C (TJ)

Mounting Style :

Through Hole

Width :

4.4 mm

Brand :

Infineon Technologies

Current - Collector Pulsed (Icm) :

3.5 A

Collector Emitter Voltage (VCEO) :

1.2 kV

Technology :

Si

Package / Case :

TO-220-3

Halogen Free :

Halogen Free

Test Condition :

800V, 1A, 241Ohm, 15V

Min Operating Temperature :

-40 °C

Subcategory :

IGBTs

Mounting Type :

Through Hole

Max Collector Current :

3.2 A

RoHS :

Details

Input Type :

Standard

Td (on/off) @ 25°C :

13ns/370ns

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 1A

Height :

9.25 mm

Collector Emitter Saturation Voltage :

2.2

Length :

10 mm

Minimum Operating Temperature :

- 40 C

Collector Emitter Breakdown Voltage :

1.2 kV

Product Category :

IGBT Transistors

Supplier Device Package :

PG-TO220-3-1

Voltage - Collector Emitter Breakdown (Max) :

1200 V

Continuous Collector Current :

3.2

Series :

IGP01N120

Packaging :

Tube

IGBT Type :

-

Contact Plating :

Tin

Maximum Operating Temperature :

+ 150 C

Max Operating Temperature :

150 °C

Product Type :

IGBT Transistors

Package :

Bulk

Switching Energy :

140µJ