IGLD60R190D1AUMA1
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- Mfr.Part #
- IGLD60R190D1AUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-LDFN Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A LSON-8
- Stock
- 45
- In Stock ：
- 45
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 157pF @ 400V
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Factory Lead Time :
- 12 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- 8-LDFN Exposed Pad
- Series :
- CoolGaN™
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Vgs (Max) :
- -10V
- Drain to Source Voltage (Vdss) :
- 600V
- Power Dissipation-Max :
- 62.5W Tc
- Vgs(th) (Max) @ Id :
- 1.6V @ 960μA
- Datasheets
- IGLD60R190D1AUMA1
N-Channel -10V 157pF @ 400V 600V 8-LDFN Exposed Pad
IGLD60R190D1AUMA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 157pF @ 400V.This transistor requires a drain-source voltage (Vdss) of 600V.
IGLD60R190D1AUMA1 Features
a 600V drain to source voltage (Vdss)
IGLD60R190D1AUMA1 Applications
There are a lot of Infineon Technologies
IGLD60R190D1AUMA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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| Part | Manufacturer | Stock | Description |
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| IGLD60R070D1AUMA1 | Infineon Technologies | 3,009 | GANFET N-CH 600V 15A LSON-8 |
| IGLD60R070D1AUMA3 | Infineon Technologies | 1 | GANFET N-CH |
| IGLD60R190D1SAUMA1 | Infineon Technologies | 17,190 | GAN HV PG-LSON-8 |
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