IGLD60R070D1AUMA1

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Mfr.Part #
IGLD60R070D1AUMA1
Manufacturer
Infineon Technologies
Package / Case
8-LDFN Exposed Pad
Datasheet
Download
Description
GANFET N-CH 600V 15A LSON-8
Stock
3,009
In Stock :
3,009

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs(th) (Max) @ Id :
1.6V @ 2.6mA
Current - Continuous Drain (Id) @ 25°C :
15A Tc
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
380pF @ 400V
Power Dissipation-Max :
114W Tc
Factory Lead Time :
12 Weeks
Series :
CoolGaN™
Vgs (Max) :
-10V
FET Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Package / Case :
8-LDFN Exposed Pad
Drain to Source Voltage (Vdss) :
600V
Datasheets
IGLD60R070D1AUMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IGLD60R070D1AUMA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-LDFN Exposed Pad, IGLD60R070D1AUMA1 pinout, IGLD60R070D1AUMA1 datasheet PDF, IGLD60R070D1AUMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IGLD60R070D1AUMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IGLD60R070D1AUMA1


N-Channel Tape & Reel (TR) -10V 380pF @ 400V 600V 8-LDFN Exposed Pad

IGLD60R070D1AUMA1 Description


IGLD60R070D1AUMA1 is a 600V CoolGaN? enhancement-mode Power Transistor. IGLD60R070D1AUMA1 CoolGaN? 600V enhancement mode power transistor offers fast turn-on and turn-off speed, minimum switching losses, and enables simple half-bridge topologies with the highest efficiency.

The gallium nitride CoolGaN? 600V IGLD60R070D1AUMA1 is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. It addresses datacom and server SMPS, telecom as well as adapter, charger, wireless charging, and numerous other applications that demand the highest efficiency or power density.



IGLD60R070D1AUMA1 Features


  • Enhancement mode transistor – Normally OFF switch

  • Ultra-fast switching

  • No reverse-recovery charge

  • Capable of reverse conduction

  • Low gate charge, low output charge

  • Superior commutation ruggedness

  • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22)



IGLD60R070D1AUMA1 Applications


  • Industrial

  • Telecom

  • Datacenter SMPS

  • Adapter

  • Charger

  • Wireless charging


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