IGD01N120H2BUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Published :

1998

Switching Energy :

140µJ

Terminal Position :

Single

Input Type :

Standard

JESD-609 Code :

e3

ECCN Code :

EAR99

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

4

Reach Compliance Code :

not_compliant

Current - Collector (Ic) (Max) :

3.2A

Factory Lead Time :

18 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power - Max :

28W

Surface Mount :

yes

Pbfree Code :

No

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Td (on/off) @ 25°C :

13ns/370ns

Current - Collector Pulsed (Icm) :

3.5A

Test Condition :

800V, 1A, 241 Ω, 15V

Gate Charge :

8.6nC

Operating Temperature :

-40°C~150°C TJ

JEDEC-95 Code :

TO-252AA

Voltage - Collector Emitter Breakdown (Max) :

1200V

JESD-30 Code :

R-PSSO-G2

Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Polarity/Channel Type :

NPN

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Number of Terminations :

2

Mounting Type :

Surface Mount

Vce(on) (Max) @ Vge, Ic :

2.8V @ 15V, 1A

Case Connection :

COLLECTOR

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)