IGC39T65QEX1SA1
- Mfr.Part #
- IGC39T65QEX1SA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Die
- Datasheet
- Download
- Description
- IGBT CHIP
- Stock
- 6,878
- In Stock :
- 6,878
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Max Dual Supply Voltage :
- 650V
- RoHS Status :
- ROHS3 Compliant
- Halogen Free :
- Halogen Free
- Vce(on) (Max) @ Vge, Ic :
- 2.22V @ 15V, 75A
- Input Type :
- Standard
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 650V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 650V
- Current - Collector Pulsed (Icm) :
- 225A
- IGBT Type :
- Trench Field Stop
- Published :
- 2012
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Package / Case :
- Die
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C~175°C TJ
- Current - Collector (Ic) (Max) :
- 75A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IGC39T65QEX1SA1
IGC39T65QEX1SA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IGC39T65QEX1SA1 Description
IGC39T65QEX1SA1 is a single IGBT from the manufacturer Infineon Technologies with a Collector-Emitter Voltage (VCEO) of 650V. The operating temperature of the IGC39T65QEX1SA1 is
-40°C~175°C TJ and its Current - Collector (Ic) (Max) is 75A. IGC39T65QEX1SA1 has 3 pins and it is available in Die packaging way. The Drain to Source Voltage (Vdss) of IGC39T65QEX1SA1 is 650V.
IGC39T65QEX1SA1 Features
-
650V Trench & Field Stop technology
-
high speed switching series third generation
-
low VCE(sat)
-
low EMI
-
low turn-off losses
-
positive temperature coefficient
-
qualified according to JEDEC for target applications
IGC39T65QEX1SA1 Applications
-
uninterruptible power supplies
-
welding converters
-
converters with high switching frequency
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