IGB20N65S5ATMA1
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- Mfr.Part #
- IGB20N65S5ATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- Datasheet
- Download
- Description
- IGBT PRODUCTS
- Stock
- 12
- In Stock ：
- 12
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Factory Lead Time :
- 16 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2008
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Datasheets
- IGB20N65S5ATMA1
IGB20N65S5ATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IGB20N65S5ATMA1 Description
The IGB20N65S5ATMA1 is a 650 V, 20 A IGBT with an anti-parallel diode in the TO263 package.
IGB20N65S5ATMA1 Features
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Very low VCEsat of 1.35 V at 25°C, 20% lower than TRENCHSTOP? 5 H5
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I C(n)=four times nominal current (100°C Tc)
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Soft current fall characteristics with no tail current
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Symmetrical, low voltage overshoot
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The gate voltage is under control (no oscillation). No risk of unwanted turn-on of the device and no need for gate clamping
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Maximum junction temperature Tvj=175°C
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Qualified according to JEDEC standards
IGB20N65S5ATMA1 Applications
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Energy Storage Systems
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Industrial heating and welding
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Power Management (SMPS) - Reference Design
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Solutions for photovoltaic energy systems
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| Part | Manufacturer | Stock | Description |
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| IGB20N60H3ATMA1 | Infineon Technologies | 1 | IGBT TRENCH/FS 600V 40A D2PAK |
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