HUF75339G3

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

TIN LEAD

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

70A

Package / Case :

TO-247-3

Drain-source On Resistance-Max :

0.012Ohm

DS Breakdown Voltage-Min :

55V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Series :

UltraFET™

Input Capacitance (Ciss) (Max) @ Vds :

2pF @ 25V

Reach Compliance Code :

Unknown

Qualification Status :

COMMERCIAL

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e0

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

55V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

12m Ω @ 75A, 10V

JESD-30 Code :

R-PSFM-T3

Terminal Position :

Single

Pbfree Code :

No

Vgs (Max) :

±20V

Surface Mount :

No

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 20V

Packaging :

Tube

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

FET Type :

N-Channel

Power Dissipation-Max :

200W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED