HS8K11TB

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

17.9m Ω @ 7A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

500pF @ 15V

Transistor Element Material :

SILICON

Factory Lead Time :

20 Weeks

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Package / Case :

8-UDFN Exposed Pad

Continuous Drain Current (ID) :

11A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN SOURCE

Packaging :

Cut Tape (CT)

Reach Compliance Code :

not_compliant

Operating Temperature :

150°C TJ

Configuration :

COMPLEX

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

7A 11A

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

28A

FET Type :

2 N-Channel (Dual)

Drain-source On Resistance-Max :

0.0291ohm

Gate Charge (Qg) (Max) @ Vgs :

11.1nC @ 10V

Avalanche Energy Rating (Eas) :

3.6 mJ

Max Power Dissipation :

2W

Number of Terminations :

8

Terminal Form :

NO LEAD

FET Feature :

Logic Level Gate

Published :

2015

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

2

Drain Current-Max (Abs) (ID) :

7A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

2.5V @ 1mA

JESD-30 Code :

S-PDSO-N8

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V